| Brand | Impulse Technologies |
|---|---|
| Frequency Range | 0.5 GHz to 65 GHz |
| VSWR | Low |
| Insertion Loss | Low |
Ultra Low Noise Amplifiers (ULNA)
The Electro-Metric Ultra Low Noise Amplifiers (ULNA) is a high-performance amplifier series designed to provide exceptional signal enhancement in high-frequency RF environments. These units feature ultra-low noise performance across a broad spectrum from 0.5 GHz to 65 GHz with typical gain reaching 20 to 35 dB. They are the ideal solution for increasing the sensitivity of advanced receiver systems while maintaining signal purity.
Key Specifications & Features
- Frequency Range: 0.5 GHz to 65 GHz
- Typical Gain: 20 dB to 35 dB
- Semiconductor Technology: InP HEMT
- VSWR: Low VSWR for optimized matching
- Insertion Loss: Minimal insertion loss performance
- Isolation: High isolation for signal protection
- Signal Balance: Low phase and amplitude balance
- Packaging Options: Available in commercial and hermetic versions
No downloads available.
Ultra Low Noise Amplifiers (ULNA)
The Electro-Metric Ultra Low Noise Amplifiers (ULNA) series delivers critical signal amplification for high-frequency applications covering the range from 0.5 GHz up to 65 GHz. These amplifiers are specifically engineered to support high-sensitivity receivers where maintaining a low noise floor is essential for accurate data acquisition. By providing consistent gain performance and low VSWR, these units ensure reliable operation across a variety of demanding commercial and laboratory RF testing environments.
Built using advanced InP HEMT semiconductor technology, these amplifiers offer superior noise figures and high isolation characteristics. The construction focuses on minimizing phase and amplitude imbalances, which is vital for maintaining signal integrity in complex modulation schemes and high-precision measurements. This specialized technology allows for typical gain levels between 20 and 35 dB while ensuring low insertion loss throughout the entire operating frequency range.
This series offers significant versatility with multiple model configurations available to meet specific project or environmental requirements. Users can select between standard commercial housings or hermetically sealed options for use in more rigorous or controlled aerospace and defense environments. With its broad frequency coverage and robust design, the ULNA series is an essential component for satellite communications, electronic warfare, and high-speed wireless testing applications.
Wide Frequency Coverage
Operating ranges from 0.5 GHz to 65 GHz support a diverse array of RF and microwave applications.
Advanced Semiconductor Technology
InP HEMT technology provides superior noise figures and exceptional thermal stability for high-frequency signals.
Optimized Signal Gain
Typical gain levels of 20 to 35 dB provide robust signal boosting for weak inputs in high-sensitivity systems.
Robust Packaging Options
Available in both commercial and hermetic packages to suit various environmental and operational requirements.
Advanced InP HEMT Technology
These amplifiers leverage Indium Phosphide (InP) High Electron Mobility Transistor (HEMT) technology to achieve industry-leading ultra-low noise performance. This specialized semiconductor material allows for higher electron velocity and better thermal conductivity, ensuring stable gain and sensitivity even at frequencies reaching 65 GHz.
High-Sensitivity Receiver Optimization
Designed primarily for high-sensitivity receiver chains, these ULNAs minimize signal degradation through low insertion loss and high isolation. Their excellent phase and amplitude balance make them indispensable for applications requiring high-fidelity signal reproduction and minimal distortion during the amplification process.
Request for quote
Looking for a custom solution or a tailored offer? Please fill out the form below, and we’ll get back to you as soon as possible with a personalized quote.
